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PD - 97459
AUTOMOTIVE GRADE
AUIRF2804S-7P
Features
l l l l l l l
HEXFET(R) Power MOSFET
V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6m 320A 240A
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
G S
ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D D SS G S
S S
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current c Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Continuous Drain Current, VGS @ 10V (Package Limited) Maximum Power Dissipation
Max.
320 230 240 1360 330 2.2 20 630 1050 See Fig.12a,12b,15,16 -55 to + 175 300
Units
A
W W/C V mJ A mJ C
c
h
d
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
RJC RCS RJA RJA Junction-to-Case
j
Parameter
Typ.
--- 0.50 --- ---
Max.
0.50 --- 62 40
Units
C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)
i
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
02/19/2010
AUIRF2804S-7P
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) SMD VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40 --- --- 2.0 220 --- --- --- --- --- 0.028 1.2 --- --- --- --- --- --- --- --- 1.6 4.0 --- 20 250 200 -200
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 160A V VDS = VGS, ID = 250A S VDS = 10V, ID = 160A A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 170 63 71 17 150 110 100 4.5 7.5 6930 1750 970 5740 1570 2340 260 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF nC
Conditions
ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6 VGS = 10V Between lead,
ns
e d
nH
D
6mm (0.25in.) from package
G
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 43 48 320 A 1360 1.3 65 72 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 160A, VGS = 0V TJ = 25C, IF = 160A, VDD = 20V di/dt = 100A/s
e
e
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value is determined from sample failure population, This is applied to D2Pak, when mounted on 1" square PCB
starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C.
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AUIRF2804S-7P
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2Pak 7 Pin MSL1 Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRF2804S-7P
10000
TOP
10000
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
TOP
1000
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
100
4.5V 60s PULSE WIDTH Tj = 175C
4.5V
10 0.1 1
60s PULSE WIDTH Tj = 25C
10 10 100 0.1 1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
240
Gfs, Forward Transconductance (S)
TJ = 25C 200 160 120 80 40 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) TJ = 175C
ID, Drain-to-Source Current()
100.0
TJ = 175C
10.0
1.0
TJ = 25C VDS = 20V 60s PULSE WIDTH
0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VDS = 10V 380s PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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AUIRF2804S-7P
14000 12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 160A 16
VDS = 32V VDS= 20V
C, Capacitance (pF)
10000 8000 6000 4000 2000 0 1
Ciss
12
8
Coss Crss
4
0
10 100
0
50
100
150
200
250
300
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.0
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
TJ = 175C
100.0
OPERATION IN THIS AREA LIMITED BY R DS (on)
1000 100sec
100
10.0
TJ = 25C
1.0
10 1msec 10msec DC 10 100 1000
1
VGS = 0V
0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4
Tc = 25C Tj = 175C Single Pulse 0 1
0.1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
nce
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
AUIRF2804S-7P
350 300
ID, Drain Current (A)
2.0
Limited By Package
250 200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 160A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance vs. Temperature
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 C 1 2
0.01
Ri (C/W) 0.1951 0.3050
i (sec) 0.000743 0.008219
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF2804S-7P
EAS, Single Pulse Avalanche Energy (mJ)
2500
15V
2000
VDS
L
DRIVER
ID 21A 33A BOTTOM 160A
TOP
RG
VGS 20V
D.U.T
IAS tp
1500
+ V - DD
A
0.01
1000
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
500
0 25 50 75 100 125 150 175
Starting TJ, Junction Temperature (C)
I AS
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS VG QGD
4.5
VGS(th) Gate threshold Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175
Charge
Fig 13a. Basic Gate Charge Waveform
ID = 1.0A ID = 1.0mA ID = 250A
L
0
DUT 1K
VCC
TJ , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
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AUIRF2804S-7P
10000
Duty Cycle = Single Pulse
1000
Avalanche Current (A)
100
0.01 0.05 0.10
10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
1
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
800
EAR , Avalanche Energy (mJ)
600
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 160A
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f 175 ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
8
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AUIRF2804S-7P
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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AUIRF2804S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUF2804S-7P
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2804S-7P
D2Pak - 7 Pin Tape and Reel
IRF2804STRL-7P IRF2804STRL-7P IRF2804STRL-7P
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF2804S-7P
Ordering Information
Base part AUIRF2804S-7P Package Type D2Pak 7 Pin Standard Pack Form Tube Complete Part Number Quantity 75 AUIRF2804S-7P
12
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AUIRF2804S-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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